Abstract
Raman spectra of p-type ${\mathrm{In}}_{0.53}$${\mathrm{Ga}}_{0.47}$As with doping levels ranging from p=2\ifmmode\times\else\texttimes\fi{}${10}^{17}$ to 5\ifmmode\times\else\texttimes\fi{}${10}^{19}$${\mathrm{ncm}}^{\mathrm{\ensuremath{-}}3}$ have been investigated. Analysis of the Raman line shape and its dependence on the free-hole density demonstrates four-mode behavior of optical phonons. Based on the oscillator strength and Faust-Henry factors of the optical phonons determined from the Raman data, and lattice-dynamic calculations of the phonon dispersion relations in ordered structures of ${\mathrm{InGaAs}}_{2}$, we show a relationship between the observed four-mode behavior and short-range order phase-separation effects.
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