Abstract
Abstract Rutherford backscattering (RBS) around the 〈011〉 direction of ZnSe grown by molecular beam epitaxy on (001) GaAs was measured to determine the lattice strain directly. The results obtained showed the tensile strain of ZnSe along the 〈001〉 growth direction and that of GaAs in the interface region along the direction perpendicular to the growth direction. The angle between the 〈011〉 and 〈001〉 directions indicates elongation and shrinkage of the lattice constants. This value for ZnSe is smaller than that calculated from an elastic model. The difference between observed and calculated angles may arise because the ZnSe lattice is partially accommodated by misfit dislocations.
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