Abstract
Silicon carbide (SiC) is an important material that has the potential to be used in the nuclear industry. The surface of 0001 silicon carbide, 4H polytype wafer has been irradiated by electron accelerator at the accelerator voltage of 3 MeV and 10 mA beam current. Samples were irradiated to dose received of 1000 kGy, 1500 kGy and 2000 kGy. Characterization of the samples have been done using X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the electron irradiation effect on structure as well as current-voltage tests to study electrical property.
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