Abstract
The lattice sites of As ions implanted in diamond and the annealing of implantation damage were investigated in emission channeling measurements. A dose of 1.0×1013 cm−2 73Se ions was implanted into IIa diamond at 300 K with an energy of 60 keV. 73Se (t12=7.1 h) decays to 73As (t1/2=80 d), which in turn decays to excited states in 73Ge. Channeling effects were measured on conversion electrons emitted in the 73Ge decay. Annealing studies in the range 873–1673 K showed an annealing stage of the implantation damage setting in at 1100 K. Comparison of the measured effects with simulations based on the dynamical theory of electron diffraction showed that after annealing at temperatures above 1100 K, 55(5)% of the implanted ions were located on substitutional lattice sites.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
