Abstract
Abstract The lattice site of donor Te atoms in GaAs was studied by the channeling technique in order to determine the position of the nonsubstitutional fraction. Single crystals of pure GaAs with a (100) orientation were implanted with 220 keV Te ions to a dose of 3 × 1014 cm−2. After rapid thermal annealing (820°C, 15 s) angular scans through three major axial directions were measured with 3.9 MeV He+ ions. A strong asymmetry, observed in 〈110〉 scans along a (211) plane, is discussed and quantitatively explained by Monte Carlo simulations. Analysis of the data for Te, by comparison with computer simulations, shows that practically all Te atoms are close to As sites, with an average displacement of 0.32 ± 0.04 A . A clear separation in a substitutional fraction and a nonsubstitutional fraction at a unique site is not evident. The best overall fit for the Ga + As RBS spectra was obtained for thermal vibration amplitudes corresponding to a Debye temperature of 260 ± 10 K.
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