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Abstract
In this work we report on the lattice location of implanted Ag in ZnO single crystals, evaluated by means of the emission channeling technique. Following 60keV low-dose (2×1013cm−2) ion implantation, the β− emission patterns from 111Ag were monitored with a position-sensitive detector as a function of annealing temperature up to 800°C in vacuum. Our experiments revealed that in the as-implanted state around 30% of the Ag atoms are substitutional at the Zn site with root mean square displacements around 0.17–0.28Å. Though this fraction did not change with increasing annealing temperature, upon annealing at 600°C the root mean square displacement of Ag from the Zn site increased considerably, followed by partial outdiffusion during 800°C annealing.
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