Abstract
The lattice scattering term in 2D electron transport in Si inversion layers has been evaluated from resistivity data below 50 K at several electron concentrations between 1 and 5 × 10 12 cm −2. Dependences of the lattice scattering mobility on the temperature and the electron concentration are fairly well explained by the small angle scattering of electrons by surfons. However, it is impossible to explain the numerical value of the mobility by the surfon scattering theory without assuming a deformation potential constant in the surface region which is twice the bulk value.
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