Abstract
The lattice relaxation of ZnS epilayers grown on GaP substrates by hot-wall epitaxy was investigated. The dependence of lattice constants and full widths at half-maximum of the double crystal rocking curves upon layer thickness was observed. The critical thickness for ZnS/GaP is found to be about 350 Å. The epilayers thinner than the critical thickness have almost the same lattice constants. The strain due to the lattice mismatch is almost relaxed in epilayers thicker than 2.5 μm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
