Abstract
Semipolar AlxGaN films (∼660 nm thick) are fabricated on (11̅02) (r-plane) AlN substrates. X-ray diffraction measurements suggest that the structural quality is relatively good although lattice relaxation occurs. The experimentally evaluated relaxation degrees are 0.90 and 0.72 along the [11̅01̅] and [112̅0] directions, respectively. These values, which are much larger than those of c-plane AlxGaN for a similar Al composition and thickness, are reproduced by a calculation. Dislocations due to lattice relaxation are confined to the vicinity of the AlxGaN/AlN interface, suggesting a small effect on the optical properties of quantum wells fabricated on r-plane AlxGaN/AlN templates.
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