Abstract
We have proposed a 1.3-μm-wavelength InGaAs(P)/InGaP double-heterostructure laser that increases the band gap difference by using a wide band gap InGaP cladding layer. Epitaxial lateral overgrowth (ELO) has been investigated with liquid phase epitaxy to produce a high-crystal-quality ternary InGaP layer that has a large lattice mismatch on a GaAs (1 1 1)B substrate. In a previous study, we were able to produce a large area of In 0.8Ga 0.2P on a GaAs (1 1 1)B substrate. However, there were a number of cracks and the crystal quality of the epitaxial layer was poor. In this study, we succeeded in reducing the number of defects in ELO layers by using a spin-on diffusion source instead of a sputtering SiO 2 mask for ELO. We also attempted to grow a second InGaP layer over the first InGaP ELO layer. We were able to obtain an InGaP epitaxial layer with a mismatch to the GaAs substrate.
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