Abstract
The growth of lattice-matched In 1- x Ga x P 1- z As z-InP heterojunctions by constant-temperature liquid phase epitaxy has been examined. The LPE heterojunction growth is carried out at 640°C employing In-rich melts saturated at 650°C. The effect of lattice mismatch on heterojunction interfaces and on crystal surface morphology is reported. In particular, the characterization of the misfit dislocation structure resulting from lattice mismatch is described. Also described is the growth of multilayer In 1- x Ga x P 1- z As z heterojunction structures which permit further examination of the effects of lattice mismatch and disl ocation formation, and which demonstrate that complex lattice-matched In 1- x Ga x P 1- z As z heterojunction structures can be grown b y liquid phase epitaxy.
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