Abstract
The lattice, magnetic, and electronic transport properties of Mn 3X 1− y Ge y C (X = Al, Zn, and Ga; y = 0, 0.5) were investigated. Ge-doping does not change the antiperovskite structure, and only decreases the lattice constant in different degree. For all Mn 3X 1− y Ge y C, Ge-doping makes the magnetic transition temperature decrease. The total behavior of Mn 3Al x Ge 1− x C in temperature dependence of resistivity is metallic. For Mn 3Ga x Ge 1− x C, since the carrier densities in the ferromagnetic phase and antiferromagnetic one are different, with decreasing the temperature, the resistivity appears an abrupt increase.
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