Lattice location of implants in diamond by conversion electron emission channeling

Abstract

There is an increasing interest in diamond, inter alia, because of the efficient new metastable techniques of growing thin diamond films. Consequently, there is an increased potential for the industrial exploitation of the unique properties of diamond as, for example, a specialized coating or as semiconductor devices. This requires extensive studies of the physical processes of solid state chemistry and defect engineering in diamond. Conversion electron emission channeling spectroscopy can be used to study lattice site occupancy and other more complex processes. Initial results show a significant population of the substitutional site and also the importance of substrate temperature during implantation for local annealing. In order to shorten the data acquisition time, and minimise radiation damage by implanting less activity, a two-dimensional position and energy sensitive detector, capable of accumulating the whole angular scan simultaneously has been deployed.