Lattice location and annealing behavior of Mn implanted GaN

Abstract

Gallium nitride (GaN) is a direct wide-band-gap semiconductor material, which can be used to produce blue-light-emitting diodes and lasers, high-temperature and high-power devices. While manganese (Mn) represents a potential acceptor in GaN, Mn-doped GaN may form an interesting diluted magnetic semiconductor. In this study, GaN was implanted at room temperature using 180 keV Mn + ions to fluences ranging from 5×10 15 to 3×10 16 cm −2. Subsequent annealing was performed in a flowing N 2 ambient, at 1050 °C for 12 min. The damage buildup and removal, as well as the lattice site location of Mn in GaN was studied by using Rutherford backscattering/channeling combined with particle induced X-ray emission. The angular scans around the 〈0 0 0 1〉 and 〈1 0 1 ̄ 1〉 axial directions indicate that Mn mainly occupies substitutional Ga sites. During the thermal treatment, no significant redistribution of the implanted Mn ions was found.