Lattice gas study of thin-film growth scenarios and transitions between them: Role of substrate.

Abstract

Thin-film growth is investigated in two types of lattice gas models where substrate and film particles are different, expressed by unequal interaction energy parameters. The first is of solid-on-solid type, whereas the second additionally incorporates desorption, diffusion in the gas phase above the film and readsorption at the film (appropriate for growth in colloidal systems). In both models, the difference between particle-substrate and particle-particle interactions plays a central role for the evolution of the film morphology at intermediate times. The models exhibit a dynamic layering transition which occurs at generally lower substrate attraction strengths than the equilibrium layering transition. A second, flattening transition is found where initial island growth transforms to layer-by-layer growth at intermediate deposition times. Combined with the known roughening behavior in such models for very large deposition times, we present four global growth scenarios, charting out the possible types of roughness evolution.