Lattice gas model for semiconductor (111) surface reconstruction

Abstract

A simple lattice gas model is proposed for semiconductor (111) surface reconstruction. By signing energy parameters to the gas particles and the interaction among them we found that the local structure for the silicon (111) surface (7 × 7) reconstruction and the germanium (111) surface c(2 × 8) reconstruction should be different, and that the formation of the dimers on the surfaces plays a very important rule in the surface reconstructions. We suggest that a dimer instead of a simple adatom should be the basic building unit for the germanium (111) surface c(2 × 8) reconstruction.