Abstract
AbstractThe phonon dispersion curves for α‐SiO2 crystals were calculated on the basis of a rigid‐ion model. The first‐order Raman spectra of the A1 mode of the α‐SiO2 crystal were measured in the temperature range from 303.1 to 773.1 K. The temperature dependence of the linewidth was analyzed by using the phonon dispersion curves, and the results showed that it was caused approximately by the cubic anharmonic term in the crystal potential energy. The temperature dependence of the frequency shift of the A1 mode was analyzed by using the lattice dynamic perturbative treatment. We found that the quartic anharmonic term of the first‐order perturbation and also the cubic term of the second‐order perturbation contribute to the temperature dependence of the frequency shift of the A1 mode in the α‐SiO2 crystal. Copyright © 2003 John Wiley & Sons, Ltd.
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