Abstract

Thin silver films (thickness, 12.5–160 nm) were evaporated under ultrahigh vacuum conditions onto clean glass substrates (substrate temperature, 225 K). During the growth process a large number of lattice defects were incorporated (condensation rate, 0.2 and 0.01 nm s -1). The films were subjected to heat treatment (constant heating rate, 0.1 K s -1) and the variation in the electrical resistance was measured as a function of temperature. Using Vand's theory the initial lattice distortion energy spectra of the films were determined from the resistance-temperature data. The lattice distortion energy function has maximum values. While the number of distortions with a decay energy of about 0.8 eV increases rapidly with decreasing film thickness, the number of distortions with a decay energy of about 0.93 eV varies only slightly.

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