Abstract
Epitaxial 〈0 0 1〉 oriented lead–zirconate–titanate (PZT) thin films (Pb 0.98Zr 0.54Ti 0.46O 3) were prepared by sputtering onto (1 0 0) SrTiO 3 and (1 0 0) MgO substrates at 570 ∘C. Rutherford backscattering (RBS) analysis of the as-deposited thin films revealed that the Pb content increased with increasing O 2 partial pressure in the Ar–O 2 sputter gas and reached a value of Pb 0.98 under optimized conditions. Channeling measurements (RBS-C) resulted minimum yield values of 7%. The dechanneling component was attributed to stacking faults as determined from energy-dependent dechanneling measurements. Implantation of 260 keV Pb ions at room temperature at a dose of 5×10 13 Pb +/ cm 2 amorphized the thin films. Solid phase epitaxial regrowth occurred in the temperature region between 400 ∘C and 500 ∘C. At temperatures above 500 ∘C the recovery is retarded while at the same time a disturbed interface appeared. Besides the amorphous region in the range of the implanted layer, ion implantation produces enhanced dechanneling throughout the total film thickness, which is attributed to dislocations.
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