Abstract
The lattice deformation of a-ZnO films on r-plane Al2O3 substrates, grown by plasma-assisted molecular-beam epitaxy (PAMBE), is strongly dependent on growth temperature: i) the unit cell volume is smaller than that of a reference ZnO bulk and it increases with the increase in growth temperature; ii) a-plane lattice constants decrease and c-plane lattice constants increase with the increase in growth temperature; and iii) residual strain decreases with the increase in growth temperature, irrespective of the direction of a-, m-, and c-axes. It is proposed that the ZnO lattices in the a-ZnO/r-Al2O3 system are individually relaxed along in-plane axes by releasing the residual strain in terms of compensating thermal mismatch.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
