Latest Advances in the Generation of Single Photons in Silicon Carbide

Albert Boretti,Lorenzo Rosa

doi:10.3390/technologies4020016

Albert Boretti, Lorenzo Rosa

Open Access

https://doi.org/10.3390/technologies4020016

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Abstract

The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC) has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC.

Highlights

Single photon emission by optical laser excitation has already been demonstrated for single quantum systems as semiconductor quantum dots, atoms, ions, molecules and color centers at cryogenic and room temperatures [1,2,3,4,5,6,7]
Single photon emission by electrical excitation has some technical advantages vs. the optical excitation, and it is worthy of new studies
Optical and microwave techniques similar to those used with diamond nitrogen-vacancy qubits, have been used to study the spin-1 ground state of the neutral carbon-silicon divacancy in 4H-Silicon Carbide (SiC), which could be optically controlled at 20 to 300 K temperature, and optically active defect spin states near telecommunication wavelengths, which, combined with industrial-scale crystal growth and advanced microfabrication techniques, and spin coherence properties comparable to the nitrogen-vacancy center can be used in a variety of photonic and quantum information applications [16]

Summary

Introduction

Single photon emission by optical laser excitation has already been demonstrated for single quantum systems as semiconductor quantum dots, atoms, ions, molecules and color centers at cryogenic and room temperatures [1,2,3,4,5,6,7]. We review the latest advances in single photon generation at room temperatures based on SiC. The image is reprinted by permission from Reference [9], copyright 2012, Macmillan Publishers Ltd.: Nature Photonics.

Results

Conclusion