Abstract
In recent years, there is a growing need for a better performance, lower cost, brighter and longer life luminous and display technology. Perovskite materials have attracted widespread attention because of their excellent performance in optoelectronic devices. For example, it has high carrier mobility, small emission line width, bandgap tunability, and strong photoluminescence quantum yield (PLQY). As a result, perovskite light-emitting diodes (LEDs) have developed rapidly over the past few years. This article starts with the basic parameters of perovskite LED (PeLED) devices and describes the basic structure and working principle of perovskite LED devices. And it mainly reviews the development history of 3D perovskite LEDs and states the latest progress in the research of perovskite quantum dots (QDs) and hole transport layers (HTLs) and electron transport layers (ETLs) in perovskite LED devices. Finally, the problems restricting the development of perovskite LEDs are summarized. This article offers a comprehensive understanding of perovskite LED devices and their future research directions.
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