Abstract
We report a novel long wavelength(1.55 μm) vertical cavity laser using a current constricting AlAs oxidation layer. The devices exhibit record low room temperature continuous wave (cw) threshold current(1.3 mA) and highest cw operating temperature reported for long wavelength VCLs(39 °C). Wafer fusion is used to combined seven strain compensated InGaAsP wells between two Al(Ga)As/GaAs quarter wave mirrors.
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