Abstract
We model a laterally coupled Franz-Keldysh add-drop ring modulator designed to overcome the C-band indirect absorption of silicon-germanium. Although our concept is based on loss-sensitive interferometry, it utilizes the same highly absorptive germanium-rich compositions geared toward complementary metal-oxide semiconductor (CMOS) photodetectors and electroabsorption modulators. The proposed device can be integrated with passive waveguide networks in which the carrier plasma modulation mechanism is ineffective. In addition, unlike previous silicon-germanium modulator schemes, complex butt-coupling between the passive transport and the active silicon-germanium waveguides is not required. Instead, the optical mode remains guided within the transport waveguide, minimizing transition losses.
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