Laterally Coupled 2D MoS2 Synaptic Transistor With Ion Gating

Abstract

The dynamically active synaptic elements are the fundamental building blocks in neuromorphic systems towards artificial intelligence with computing and sensing capabilities. Here, a two-dimensional (2D) MoS2 synaptic transistor is fabricated by using poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as a laterally coupled ion-conducting electrolyte. Due to the strong electric double layer (EDL) effect, a low operating voltage of 1 V and a high current on/off ratio of 105 have been obtained. In addition, short-term and long-term plasticity of typical synaptic behaviors have been successfully simulated, such as excitatory postsynaptic current, paired pulse facilitation long-term potentiation, long-term depression, and dynamic filtering. These results can provide new opportunities and strategies in building hybrid and low-dimensional neuromorphic systems for future artificial intelligence applications.