Abstract
In this paper, a novel structure: Laterally amalgamated DUal Material GAte Concave (L-DUMGAC) MOSFET is proposed. The effectiveness of L-DUMGAC MOSFET design was examined by comparing Single Material Gate (SMG) Concave devices with L-DUMGAC devices of various gate length ratios, Negative Junction Depths (NJDs) and metal gate work functions, and it was found that L-DUMGAC exhibits significant enhancement in device characteristics in terms of device efficiency, intrinsic gain, early voltage and the switching characteristics. With the enhancement in device integration technology, the structure offers new opportunities for realizing high performance in the future ULSI production.
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