Abstract
We propose and demonstrate a novel lateral-zigzag PN junction for silicon modulator working in C and O bands. The designed PN junction exhibits characteristics of large bandwidth, high modulation efficiency, and easy fabrication. For demonstration, it is embedded in a 220 nm silicon rib waveguide on a 2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> thick buried oxide layer to form a micro-ring modulator. The measured 3 dB electro-optic bandwidth of the fabricated modulator is 42 GHz while the resistor-capacitor (RC) bandwidth is measured and calculated to be 174 GHz. Clear and open eye diagrams are obtained for 50 Gb/s non-return zero (NRZ) and 100 Gb/s four-level pulse amplitude modulation (PAM4) signals. The modulation power consumption is only 14 fj/bit.
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