Abstract
The implantation of aluminum into 4H-SiC is studied using secondary ion mass spectrometry. In particular, two-dimensional concentration profiles are obtained, which allow the investigation of lateral straggling and its dependence on the crystallographic orientation. A high dose, medium energy aluminum implantation is studied in great detail. It shows an asymmetric distribution due to the 4°-off axis growth of the epitaxial layer. The lateral straggling is found to be in the range of several micrometers for a concentration of 1×1015 cm−3, which is contrary to the expectation given by most simulation studies. Implantations performed at different orientations support the idea that lateral straggling highly depends on the particular channeling opening.
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