Abstract
This work presents an improved design that exploits dispersion matching to suppress the spurious modes in the lithium niobate first-order antisymmetric (A1) Lamb wave mode resonators. The dispersion matching in this work is achieved by micro-machining the lithium niobate thin film to balance the electrical and mechanical loadings of electrodes. In this article, the dispersion matchings of the A1 mode in lithium niobate based on different metals are analytically modeled and validated with finite-element analysis. The fabricated devices exhibit spurious-free responses with a quality factor of 692 and an electromechanical coupling coefficient of 28%. The demonstrated method herein could overcome a significant hurdle that is currently impeding the commercialization of A1 devices.
Highlights
A S5G promises to open new horizons for paradigmshifting applications, miniature wideband filters in sub6 GHz are one of the outstanding challenges in the front-end
The first-order antisymmetric (A1) Lamb wave mode resonators based on lithium niobate (LiNbO3) thin films have recently been studied as a compelling solution for sub6-GHz wideband filters due to their high kt2 (>20%) and record-break FoM [9]–[12]
The LiNbO3 sections, which will be covered by electrodes, are thinned in an inductively coupled plasma (ICP)reactive ion etching (RIE) system
Summary
A S5G promises to open new horizons for paradigmshifting applications, miniature wideband filters in sub GHz are one of the outstanding challenges in the front-end. The first-order antisymmetric (A1) Lamb wave mode resonators based on lithium niobate (LiNbO3) thin films have recently been studied as a compelling solution for sub6-GHz wideband filters due to their high kt (>20%) and record-break FoM [9]–[12]. Despite their prospect of enabling wideband and low loss filters, the demonstrated A1 devices so Manuscript received September 8, 2020; accepted December 30, 2020. To validate our analysis and modeling, different designs have been fabricated on a 650nm-thick Z-cut LiNbO3 thin film with all of them showing near spurious-free measured responses These devices have shown strong potential for enabling high-performance A1 devices for future 5G front-ends
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