Abstract
The photovoltaic properties of Si∕SiO2 multiple quantum wells (QWs) embedded in lateral Schottky contacts are investigated. The QWs were fabricated by remote plasma enhanced chemical vapor deposition. By subsequent rapid thermal annealing, the two-dimensional Si layers are partially recrystallized, which gives rise to distinct quantum confinement effects. Although the current extraction along the quantum layers is hampered by the incomplete recrystallization, the data collected define the route to optimized Si based QW solar cells.
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