Abstract
A Wolter-type X-ray mirror is installed at a soft X-ray beamline to form focused 150 eV X-rays for μ-XPS analysis. The focused beam scans across gold striped patterns (10–50 μm wide) delineated on a Si wafer, as the Si(2p) photoelectrons from the substrate are monitored to detect the patterns. Each pattern is clearly observed, although the observed pattern width is 10–40% larger than the actual width. The experimental results are evaluated using photoelectron count rate calculations that take the intensity profile of the focused beam into account. The calculations are also carried out for a 1-μm focused beam achieved in a previous study, which is assumed to scan across 1 to 5 μm-wide striped patterns. The modulation transfer function indicates that a lateral resolution below 1 μm is achievable in the one-dimensional imaging of striped patterns.
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