Abstract
A Schottky split gate technique is used to form lateral quantum dots in the two-dimensional electron gases of a high-mobility Si/SiGe heterostructure. e-beam defined palladium gates show Schottky barriers with very well controlled leakage currents. At low temperatures we observe Coulomb-blockade and stability diamonds on lateral quantum dots containing less than 25 electrons. The experiments demonstrate that, in contrast to recent reports, Schottky gates are a feasible approach for the fabrication and integration of single electron transistors in the strained Si/SiGe heterostructure.
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