Abstract
We have used a simple approach to fabricate buried InGaAs/InP quantum wires with widths down to 15 nm. Combining high resolution electron beam lithography and selective wet chemical etching only the InP cap layer of an InGaAs/InP quantum well is locally removed. InGaAs surface quantum wells are formed in the etched parts of the samples, where the energy band discontinuity of the quantum well is replaced by the high vacuum barrier. Therefore a lateral potential barrier is induced, which confines the carriers to the InP covered wire regions. In addition, the lateral potential can be strongly increased by a selective thermal intermixing step. The luminescence spectra of the wires show significant lateral quantization effects with energy shifts up to 13 meV and high quantum efficiencies up to room temperature.
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