Abstract
The properties of lateral polysilicon p‐n diodes as a function of doping level and temperature are discussed. Traps at grain boundaries greatly enhance charge‐carrier recombination or generation and, consequently, diode current. In heavily doped diodes, an excess reverse current not accounted for by classical theories is observed. Thermal emission of charge carriers from traps followed by avalanche multiplication are proposed to explain this behavior. A current‐controlled negative resistance at higher reverse bias is believed to be due to impact ionization of traps.
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