Abstract
We report the results of modeling lateral p-n junctions and p-n-p quantum wire structures at corrugated GaAs/AlGaAs interfaces, using the surface orientation dependent amphoteric nature of Si doping. We determine the potential landscape and the electron and hole charge densities within a semiclassical Thomas–Fermi screening model, and then solve the two-dimensional Schrödinger equation using finite elements for the quantized electron and hole states at the heterointerfaces. We demonstrate the formation of a one-dimensional electron system confined between two lateral p-n junctions, and discuss the advantages of this structure compared to conventional electrostatic confinement schemes for fabricating quantum wires.
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