Abstract
We investigate metal-induced lateral crystallization (MILC) of Si on insulator to achieve (101) oriented Si films. Moreover, we demonstrate the lateral liquid phase epitaxy of high quality Ge(101) layers by using the MILC-Si films as crystal seed. This technique will be employed to realize high-speed thin-film transistors with Ge channel.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.