Abstract
InAs quantum dot clusters (QDCs), which consist of three closely spaced QDs, areformed on nano-facets of GaAs pyramidal structures by selective-area growthusing metal–organic chemical vapor deposition. Photoluminescence (PL) andtime-resolved PL (TRPL) experiments, measured in the PL linewidth, peak energy andQD emission dynamics indicate lateral carrier transfer within QDCs with aninterdot carrier tunneling time of 910 ps under low excitation conditions. This studydemonstrates the controlled formation of laterally coupled QDCs, providing a newapproach to fabricate patterned QD molecules for optical computing applications.
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