Abstract
Local implantation-induced disordering of ZnCdSe quantum wells is applied to generate lateral index guided II–VI lasers. Lateral selectivity of implanted nitrogen ions is achieved by metal stripes also used for contacts. Secondary ion mass spectroscopy and luminescence prove that quantum well intermixing can be generated without subsequent thermal treatment. Lateral index guiding in II–VI lasers after implantation is demonstrated by recording the near-field pattern, yielding a lateral index step of the order of 10−3. First full index-guided injection lasers with an implantation-induced lateral confinement are processed. Threshold current density is reduced by 40% and emission characteristics of these lasers are strongly improved.
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