Abstract
AbstractDeveloping novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides are connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth rate of MoS2 is shown to be highly anisotropic with lateral to vertical growth ratios exceeding 20‐fold. Electronic and photo‐response measurements on the device structures demonstrate that the electrodeposited MoS2 layers behave like semiconductors, confirming their potential for photodetection applications. This lateral growth technique paves the way toward room temperature, scalable, and site‐selective production of various transition metal dichalcogenides and their lateral heterostructures for 2D materials‐based fabricated devices.
Highlights
Molybdenum disulfide is a two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductor material that has been used as a building block in demonstrations of high on/off ratio transistors, ultrasensitive photodetectors and sensors.[1,2,3,4] Some of these demonstrations were implemented for wearable applications by exploiting the material’s exceptional robustness and flexibility.[5,6] there remain major obstacles that hinder the industrial adoption of MoS2 and other 2D TMDC materials
We have discovered that the lateral growth rate is linear, which allowed us to controllably connect two MoS2 films grown from electrodes positioned on opposite sides across an insulator
We have demonstrated the lateral electrodeposition of transition metal dichalcogenide (TMDC) films over an insulating substrate for optical and electrical measurements
Summary
Molybdenum disulfide is a two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductor material that has been used as a building block in demonstrations of high on/off ratio transistors, ultrasensitive photodetectors and sensors.[1,2,3,4] Some of these demonstrations were implemented for wearable applications by exploiting the material’s exceptional robustness and flexibility.[5,6] there remain major obstacles that hinder the industrial adoption of MoS2 and other 2D TMDC materials. We demonstrated that our laterally grown MoS2 films are semiconductors by developing an array of photodetector devices
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