Abstract
Two-dimensional indium(III) selenide (In2Se3) is attractive because of its multiple phases and the unique properties associated with each phase, which make it promising for future flexible multifunctional applications. Here, the direct growth of lateral β’-phase In2Se3 nanoribbons using a simple atmospheric chemical vapor deposition method is demonstrated. Field-effect transistors based on the β’-phase In2Se3 nanoribbons exhibited n-type semiconducting behavior with an on/off ratio of about 104. The In2Se3 nanoribbons possessed a high external quantum efficiency (8.1 × 103%) and ultrahigh specific detectivity (7 × 1012 Jones). In addition, the In2Se3 nanoribbons were sensitive to low illumination intensity (down to 1.5 μW/cm2). This work suggests that In2Se3 nanoribbons can potentially be used in optoelectronic devices for weak signal detection.
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