Abstract
Rotation of the crystal orientation of a laterally grown grain in Si thin film was investigated with the micro-chevron laser beam scanning (μCLBS) method. The rate of orientation rotation Rθ was found to be inversely proportional to Si film thickness tSi, and a model to explain the orientation rotation was proposed. The rotation is caused by a 2.2% difference in expansion rate between the top and bottom surfaces of the Si film on solidification. An SiO2 capping film was used to suppress rotation, and as a result, a twin-free (100)-faced single-crystal Si stripe longer than 3 mm was formed. It was found that all sustainably grown grains had Rθ = 0, and all were (100) in the normal direction. This result shows that (100) is the only orientation for stable lateral crystal growth in thin film.
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