Abstract
We used laser interference (LIC), a combination of pulsed laser crystallization and holography, to fabricate polycrystalline silicon lines in an amorphous silicon (a-Si) film. Under appropriate conditions, the grains in the lines reach in-plane dimensions appreciably larger than the thickness of the initial a-Si film (up to 1.7 μm for a 300 nm a-Si film). Atomic force and transmission electron microscopy indicate that these large grains result from the lateral solidification of the silicon lines melted by the laser pulse. The lateral growth is well reproduced by simulations of the LIC dynamics by means of a two-dimensional melting and solidification model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
