Abstract
Lateral gettering has been studied by introducing cavities in the periphery of large active devices. Cavities were induced by helium implantation followed by a thermal treatment on samples previously contaminated by iron. Those cavities are known to be efficient to trap metallic impurities in silicon by chemisorption. The iron distribution in samples of 6×6 mm2 area has been monitored by measuring current versus voltage characteristics and interstitial iron concentrations by deep level transient spectroscopy on Schottky diodes uniformly distributed. A symmetrical iron distribution has been observed with a decreasing concentration close to the gettering region. This lateral gettering is enhanced with increasing thermal budget. Extensions of several millimeters can be obtained allowing applications in power device technology.
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