Abstract
We present the latest results on the metal organic vapor phase epitaxy (MOVPE) growth and fabrication of beta-gallium oxide (β-Ga<inf>2</inf>O<inf>3</inf>) based lateral field effect transistors with high figure of merit and blocking voltages. MOVPE offers several advantages such as high channel mobility, low temperature epitaxy-enabled low resistance regrown ohmic contacts and in-situ MOVPE gate dielectric. The critical metrics like V<inf>BR</inf> (breakdown voltage), R<inf>on,sp</inf> (specific on-resistance), and E<inf>AVG</inf> (average breakdown electric field) are addressed simultaneously in a β-Ga<inf>2</inf>O<inf>3</inf> transistor by utilizing a novel field-plate design - improving significantly over the state-of-the-art reports. A figure of merit of 355 MW/cm<sup>2</sup> is achieved with a breakdown voltage of 2.44 kV in a β- Ga<inf>2</inf>O<inf>3</inf> MESFET with a gate pad connected field plate. Record low metal/regrown β-Ga<inf>2</inf>O<inf>3</inf> ρ<inf>c</inf> of 8.3×10 Ω.cm and R<inf>C</inf> of 80 mΩ.mm is also demonstrated. MOVPE shows compelling potential for fabricating β-Ga<inf>2</inf>O<inf>3</inf> power devices with enhanced performance.
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