Abstract
Narrow, dry, deep-etched GaAs/GaAlAs quantum wires with modulation doping are investigated by electronic Raman scattering (RS) and far-infrared magnetotransmission (FIR). Laterally-confined plasmon and magnetoplasmon dispersions and intensities lead to the determination of the confinement potential and the free and trapped electron densities. Free electrons are observed down to a critical width wc, significantly smaller under strong illumination (RS, wc=50 nm) than in dark conditions (FIR, wc=130 nm). The induced changes of the external confining potential and lateral electron distribution are analyzed in terms of a semiclassical electrostatic approach.
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