Lateral electrical transport and field-effect characteristics of sputtered p-type chalcogenide thin films

Abstract

Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with materials sputtered at low temperature (≤ 250 °C) could play a role in flexible electronics or back-end-of-line silicon-compatible processes. Here, we explore lateral transport in chalcogenide films (Sb2Te3, Ge2Sb2Te5, and Ge4Sb6Te7) and multilayers, with Hall measurements (in ≤ 50 nm thin films) and with p-type transistors (in ≤ 5 nm ultrathin films). The highest Hall mobilities are measured for Sb2Te3/GeTe superlattices (∼18 cm2 V−1 s−1 at room temperature), over 2–3× higher than the other films. In ultrathin p-type FETs with Ge2Sb2Te5, we achieve field-effect mobility up to ∼5.5 cm2 V−1 s−1 with on/off current ratio of ∼104, the highest for Ge2Sb2Te5 transistors to date. We also explore process optimizations (e.g., the AlOx capping layer, type of developer for lithography) and uncover their tradeoffs toward the realization of p-type transistors with acceptable mobility and on/off current ratio. Our study provides essential insights into the optimization of electronic devices based on p-type chalcogenides.