Abstract
Significant lateral dopant transport occurs during seeded laser recrystallization of polysilicon. Both spreading-resistance measurements and voltage-contrast scanning electron microscopy show that phosphorus, arsenic, and boron are transported several tens of microns in the direction of the beam travel during recrystallization, while much less transport is observed in the other directions. The dopant motion orthogonal to the beam scan is consistent with liquid-phase diffusion.
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