Abstract
The spatial profiles of hot-carrier-induced interface traps in MOSFETs with abrupt arsenic junctions and oxide thickness of 10-38 nm are determined using charge pumping both in the conventional manner and with a modified constant-field approach. For the thinnest oxides the damage is highly localized in a very sharp peak that is located inside the drain at the point of maximum lateral electric field. In thicker oxides, the damage peak is broader and is shifted toward the edge of the drain junction. Two-dimensional device simulations using the measured profiles are in qualitative agreement with measured I-V characteristics after degradation. However, the magnitude of the predicted degradation is underestimated, suggesting that significant electron trapping occurs also.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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