Abstract
We have developed a new technique for the fabrication of complex coupled distributed feedback laser (DFB) lasers. A metal grating patterned lateral to a narrow ridge waveguide laser couples to the evanescent part of the guided mode. No regrowth is required for the processing, which makes this approach applicable to all material systems. DFB lasers fabricated from InGaAs/AlGaAs quantum well and dot lasers, GaInNAs DFB lasers emitting at 1.3 μm and long wavelength lasers at 2 μm based on InGaSbAs/AlGaSbAs structures are described. The lasers show low thresholds, good efficiencies and a high sidemode suppression ratio.
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