Abstract
High-resolution transmission electron microscopy has been employed to study the microstructure of GaAs lattice-matched GaInP heterostructures grown by solid source molecular beam epitaxy. It is found that the GaInP epilayers undergo lateral compositional modulation at a growth temperature of 520°C. The modulating spacing is irregular, varying between 5.0–15.0 nm. The compositional difference in the two decomposed phases is estimated between 0.14–2.1 at.%, which is far from thermal equilibrium. High-resolution TEM observation shows that, corresponding to the contrast modulation, there exist considerable lattice distortions nearly parallel to the growth direction inside the GaInP epilayers. In the distorted regions, dislocations of 60°-type are frequently observed. Factors that may contribute to the compositional modulation are discussed.
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